PART |
Description |
Maker |
IRAM136-1060A |
10A, 600Vwith Open Emitter Pins
|
International Rectifier
|
2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
MJD112L MJD112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
MJD117L MJD117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC(Korea) KEC[KEC(Korea Electronics)]
|
TIP147T TIP145T TIP146T TIP147TTU |
PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
MJE210 |
PNP (COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
TWA8-48S15 TWA8-48-5 TWA8-48S3.3 TWA8-24S5 TWA8-48 |
Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 Ohm Emitter switched bipolar transistor ESBT® 1200 V - 8 A - 0.10 Ohm Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ohm Emitter switched bipolar transistor ESBT® 1700V - 4A - 0.17 Ohm Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 Ohm 模拟IC Analog IC 模拟IC
|
Bourns, Inc.
|
NJM2360A NJM2360AD NJM2360AM |
Single, Low-Power, Strobed Differential Comparator with Open Collector and Emitter Outputs 8-SOIC -25 to 85 HIGH PRECISION DC/DC CONVERTOR CONTROL IC
|
New Japan Radio Co., Ltd. NJRC[New Japan Radio]
|
TIP112F |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|